摘要
为了得到一个更加精确的基准电压,本文对原有的经典的高阶补偿带隙基准电路经行改进。通过在传统的高阶带隙基准源结构上,改变mos管尺寸和增加一个带有反馈的运放,实现了理论分析和电路建模的完全重合。该电路采用UMC0.11μm3.3vCMOS工艺库,-30-120℃的范围内,温度系数从原有的0.42 ppm/℃被优化到0.086 ppm/℃。
In order to get a more precise reference voltage, in this paper, the original classic compensation bandgap reference circuit with high order compensation was improved. According to the traditional higher-order bandgap reference source structure,MOS size is changed and an op with a feedback was increased,thus achieve to conicide the theoretical analysis with circuit modeling.The circuit use UMC0.11μm^3.3 vCMOS process library and Within the scope of the-30 ℃,120 ℃ the temperature coefficient from the original 0.42 ppm/℃ is optimized to 0.086 ppm/℃.process library.
作者
赵鹏
ZHAO Peng(School of Information Engineering,Yulin University,Yulin 719000,China)
出处
《电子设计工程》
2020年第4期56-59,共4页
Electronic Design Engineering
关键词
电压基准
高阶补偿
温度系数
带隙基准
temperature coefficient
voltage reference
high-order compensation
bandgap
