摘要
Nowadays,researches on developing new etching materials to optimize the Ag/Si contact interface in silicon solar cells(SSCs)are rare,which alleviates the further development of SSCs.In this study,silver tellurite(Ag2 TeO3,monoclinic,P21/a(14))is synthesized and developed as an excellent etching material in SSCs.The Ag2TeO3 displays a low starting temperature of etching Si3N4 of^545°C,which is^160°C lower than that of PbO.Besides,by applying Ag2TeO3,conductive silver nanoparticles with a length of about 300~500 nm and a thickness of^50 nm form in the Ag/Si contact interface,which effectively reduces the Ag-Si contact resistance,and leads to a high solar cell efficiency of^18.4%.This study opens a new window for further enhancing the solar cell efficiency in the future.
基金
financially supported by Soft Science Research Project of Guangdong Province(No.2017B030301013)
Guangdong Innovative Team Program(No.2013N080)
Shenzhen Science and Technology Research Grant(No.JSGG20170414163208757)。