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Applying Silver Tellurite to Optimize Ag/Si Contact Interface in Silicon Solar Cells

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摘要 Nowadays,researches on developing new etching materials to optimize the Ag/Si contact interface in silicon solar cells(SSCs)are rare,which alleviates the further development of SSCs.In this study,silver tellurite(Ag2 TeO3,monoclinic,P21/a(14))is synthesized and developed as an excellent etching material in SSCs.The Ag2TeO3 displays a low starting temperature of etching Si3N4 of^545°C,which is^160°C lower than that of PbO.Besides,by applying Ag2TeO3,conductive silver nanoparticles with a length of about 300~500 nm and a thickness of^50 nm form in the Ag/Si contact interface,which effectively reduces the Ag-Si contact resistance,and leads to a high solar cell efficiency of^18.4%.This study opens a new window for further enhancing the solar cell efficiency in the future.
出处 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 2020年第3期395-400,375,共7页 结构化学(英文)
基金 financially supported by Soft Science Research Project of Guangdong Province(No.2017B030301013) Guangdong Innovative Team Program(No.2013N080) Shenzhen Science and Technology Research Grant(No.JSGG20170414163208757)。
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