电子束吸收电流表征方法在芯片失效分析中的应用

Application of Electron Beam Absorbed Current Characterization Method in Chip Failure Analysis

随着集成电路芯片关键尺寸和金属连线线宽越来越小,传统的失效点定位方法,如微光显微镜或光束诱导电阻变化等,由于分辨率的限制不能精确地定位故障点。电压衬度分析方法虽然在一些开路、短路失效分析中能快速地定位失效点,但是其局限于芯片同层分析。电子束吸收电流(EBAC)表征方法由于其定位精准且不局限于同层分析被越来越多地应用于先进制程芯片的失效分析。通过对开路、高阻和短路失效样品的分析,体现了EBAC方法在集成电路芯片失效分析中的独特优势,在涉及多层金属层的失效定位分析时,EBAC方法更加简便精确,可保证分析的成功率并缩短分析周期。

With the decrease of critical dimensions and metal interconnection line widths of integra-ted circuit chips,conventional failure point localization methods such as emission microscope or optical beam induced resistance change cannot accurately locate failure points due to the limitation of the resolution.Although failure points can be quickly located by using voltage contrast analysis in some open-circuit and short-circuit failure analyses,it is still limited to the one layer analysis of the chip.The electron beam absorbed current(EBAC)characterization method is increasingly used in advanced process chip failure analysis due to its precise localization and unlimitation to one layer analysis.The analyses of open-circuit,high-resistance and short-circuit failure samples indicate the unique advantages of the EBAC method in the failure analysis of integrated circuit chips.In the failure localization analysis involving multi-metal layers,the EBAC method is more simple and accurate,which can ensure the success rate of the analysis and shorten the analysis period.