气体流动方式对MPCVD金刚石薄膜均匀性的影响

Effect of Gas Flow Mode on Uniformity of MPCVD Diamond Films

在实验室自主研制的10 kW微波等离子体化学气相沉积装置上,通过改变气体的进出方式,探讨了气体流动方式对金刚石膜均匀性和质量的影响。结果表明:随着Si基片表面气体分子数增多,等离子体中的H原子和CH活性基团强度增强,扩散到基片表面中心的原子H和含碳活性基团增多,基片中心区域的金刚石膜生长速率略微有所提升,由原来的2.5μm/h提高到2.8μm/h,沉积得到的金刚石膜质量和均匀性均得到改善。

On the 10 kW microwave plasma chemical vapor deposition device independently developed by the laboratory,the influence of the gas flow mode on the uniformity and quality of the diamond film were discussed by changing the way of gas in and out.The results show that with the increase of the number of gas molecules on the surface of the Si substrate,the strength of the H atoms and CH active groups in the plasma increases,and the number of atoms H and carbon-containing active groups diffused to the center of the substrate surface increases.The growth rate of the diamond film was slightly increased,from 2.5μm/h to 2.8μm/h,and the quality and uniformity of the diamond film deposited were improved.