Ta^5+掺杂SrBi8Ti7O(27)共生铋层状压电陶瓷的结构与电学性能研究

Structures and Electrical Properties of Ta^5+-doped SrBi8Ti7O27 Inter-grown Bismuth Layer-structured Piezoelectric Ceramics

采用固相法制备了高价Ta^5+离子掺杂的SrBi8Ti(7-x)TaxO(27)(SBT-BIT-xTa^5+,0≤x≤0.10)共生铋层状压电陶瓷材料,系统研究了Ta^5+掺杂对陶瓷样品的结构与电学性能的影响。结果表明所有样品均为单一的m=3.5的共生铋层状结构陶瓷。适量的Ta^5+的掺杂使得陶瓷样品的晶粒尺寸细化、介电损耗降低、压电常数增大、剩余极化强度增大,当掺杂量x=0.04时,样品的压电常数达到最大值,d(33)=17 pC/N,而剩余极化强度在x=0.06时达到最大值,2Pr=3.0μC/cm^2。此外,热稳定性研究显示该陶瓷具有较好的压电稳定性,表明该材料在高温领域中具有良好的应用前景。

Ta^5+-doped SrBi8Ti7-xTaxO27(SBT-BIT-x Ta^5+,0≤x≤0.10)inter-grown bismuth layer-structured ceramics were prepared by using the conventional solid-state method.The effect of Ta^5+-doping on structural and electrical properties of the ceramics were studied.All the ceramics possessed a single inter-grown bismuth layer-structure with m=3.5.At the optimal doping concentration of Ta^5+,both the grain size and dielectric loss of the samples were reduced,while their piezoelectric constant and remanent polarization were increased.Specifically,the piezoelectric constant reached the maximum value of d33=17 pC/N for the sample with x=0.04,whereas the maximum remanent polarization was 2 Pr=3.0μC/cm2 in the sample with x=0.06.Moreover,the SBT-BIT-xTa^5+ceramics possessed excellent piezoelectric stability,indicating that the materials are promising candidates for high-temperature applications.