摘要
Precise control over the charge carrier dynamics throughout the device can result in outstanding performance of perovskite solar cells(PSCs).Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)is the most actively studied hole transport material in p-i-n structured PSCs.However,charge transport in the PEDOT:PSS is limited and inefficient because of its low conductivity with the presence of the weak ionic conductor PSS.In addition,morphology of the underlying PEDOT:PSS layer in PSCs plays a crucial role in determining the optoelectronic quality of the active perovskite absorber layer.This work is focused on realization of a non-wetting conductive surface of hole transport layer suitable for the growth of larger perovskite crystalline domains.This is accomplished by employing a facile solventengineered(ethylene glycol and methanol)approach resulting in removal of the predominant PSS in PEDOT:PSS.The consequence of acquiring larger perovskite crystalline domains was observed in the charge carrier dynamics studies,with the achievement of higher charge carrier lifetime,lower charge transport time and lower transfer impedance in the solvent-engineered PEDOT:PSS-based PSCs.Use of this solventengineered treatment for the fabrication of MAPbI3 PSCs greatly increased the device stability witnessing a power conversion efficiency of 18.18%,which corresponds to^37%improvement compared to the untreated PEDOT:PSS based devices.
Precise control over the charge carrier dynamics throughout the device can result in outstanding performance of perovskite solar cells（PSCs）. Poly（3,4-ethylenedioxythiophene）:poly（styrene sulfonate）（PEDOT:PSS） is the most actively studied hole transport material in p-i-n structured PSCs. However, charge transport in the PEDOT:PSS is limited and inefficient because of its low conductivity with the presence of the weak ionic conductor PSS. In addition, morphology of the underlying PEDOT:PSS layer in PSCs plays a crucial role in determining the optoelectronic quality of the active perovskite absorber layer. This work is focused on realization of a non-wetting conductive surface of hole transport layer suitable for the growth of larger perovskite crystalline domains. This is accomplished by employing a facile solventengineered（ethylene glycol and methanol） approach resulting in removal of the predominant PSS in PEDOT:PSS. The consequence of acquiring larger perovskite crystalline domains was observed in the charge carrier dynamics studies, with the achievement of higher charge carrier lifetime, lower charge transport time and lower transfer impedance in the solvent-engineered PEDOT:PSS-based PSCs. Use of this solventengineered treatment for the fabrication of MAPbI3 PSCs greatly increased the device stability witnessing a power conversion efficiency of 18.18%, which corresponds to ～37% improvement compared to the untreated PEDOT:PSS based devices.
基金
supported by NSF MRI (1428992)
NASA EPSCoR (NNX15AM83A)
U.S.–Egypt Science and Technology (S&T) Joint Fund
SDBoR R&D Program
EDA University Center Program (ED18DEN3030025)
supported by the U.S. Department of Energy, Office of Science, under Contract No. DE-AC0206CH11357.
