磁控溅射法制备柔性大尺寸ITO薄膜的研究

Study on the preparation of flexible large size ITO films by magnetron sputtering

为了获得适合手机触摸屏使用的ITO薄膜,寻找制备ITO薄膜的最佳工艺条件,研究了溅射功率、基底走速、氧气流量、氩气流量等工艺条件对ITO薄膜光电性能的影响。结果表明:当溅射功率为3.6 kW,基底走速为1.2 m/min,氧气流量为10.35 sccm,氩气流量为125 sccm时,所制得的ITO薄膜方阻最接近目标方阻180Ω/□,在400~780 nm可见光范围内,平均透过率达到最高值85.17%。通过采用大型卷对卷磁控溅射镀膜机制备柔性大尺寸ITO薄膜,实现了性能优良的ITO薄膜中试试验,为ITO薄膜的工业化量产提供了一条途径。

In order to obtain ITO film suitable for touch screen of mobile phone and find the best process conditions for ITO film preparation,the effects of sputtering power,substrate speed,oxygen flow rate,argon flow rate and other process conditions on the photoelectric properties of ITO film were studied.The results show that when the sputtering power is 3.6kW,the substrate speed is 1.2m/min,the oxygen flow rate is 10.35sccm,and the argon flow rate is 125sccm,the square resistance of the prepared ITO film is the closest to the target square resistance 180Ω/□,and the average transmittance reaches the highest value 85.17%in the visible light range of 400~780 nm.By using the large volume to volume magnetron sputtering coating machine to prepare large-scale ITO films,the pilot test of ITO thin films with excellent performance was realized,which provides a way for the industrial mass production of ITO films.