氮化铝多层共烧陶瓷基板的化学镀镍钯金技术

Technology of ENEPEG on AlN HTCC

氮化铝多层高温共烧陶瓷(HTCC)基板具有优良的散热性能和与芯片匹配的热膨胀系数,其热导率比LTCC高两个数量级左右。在HTCC制作过程中,需要使用高熔点的钨浆料,而钨本身不具有可焊性和可键合性,必须对HTCC表面的钨导体进行表面改性,使其具有可焊性和可键合性,便于电子装配。化学镀镍钯金是这种表面改性最理想的方案。在HTCC表面进行化镀的相关文献较少,文中论述了在HTCC上沉积化学镍钯金镀层的原理,探讨了导致化学镍钯金沉积过程中出现的附着力问题的原因,为HTCC上化学镍钯金镀层的质量控制提供了方向指引。

AlN high temperature co fired ceramic(HTCC)has good heat dissipation performance.Its thermal conductivity is about two orders of magnitude higher than LTCC.The coefficient of thermal expansion of HTCC matches with chips.In the HTCC production process,it is necessary to use tungsten paste with high melting point.However,tungsten itself has no solderability and bonding ability,so the surface modification must be carried out for the tungsten conductor at the surface of HTCC to make it has solderability and bonding ability,and thus facilitate the electronic assembly.ENEPEG is the most ideal solution for this surface modification.There are few literatures about HTCC electroless plating.The principle of ENEPEG deposition on HTCC and the reason of bad adhesion during ENEPEG deposition are discussed in this paper,so as to provide guidance for the quality control of ENEPEG on HTCC.