阵列波导光栅解复用器的偏振相关损耗的优化

Optimization of Polarization-Dependent Loss of Arrayed Waveguide Grating Demultiplexer

对硅基二氧化硅阵列波导光栅解复用器(AWG DEMUX)的偏振相关损耗(PDL)进行了优化。理论分析了引起AWG偏振相关性的物理因素以及消除偏振相关性的工艺方法和条件。利用化学气相沉积、光刻和刻蚀等半导体工艺制备了AWG DEMUX芯片,并结合理论分析对包层材料中的硼(B)、磷(P)含量进行了优化调整,成功地将芯片的PDL降低至0.12 dB,使PDL参数满足芯片的商用化需求。

In this work,the polarization-dependent loss(PDL)of a SiO2/Si arrayed waveguide demultiplexer(AWG DEMUX)is optimized.The physical factors causing the polarization dependence of the AWG and the process methods and conditions required to eliminate this dependence are analyzed theoretically.AWG DEMUX chips are fabricated by semiconductor processes,such as chemical-vapor deposition,photolithography,and etching.The boron and phosphorus contents in the cladding material are optimized and adjusted according to theoretical analysis.The PDLs of the chips are successfully reduced to 0.12 dB so that the PDL parameters meet the chip′s commercialization requirements.