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垂直生长碳纳米管阵列可见光高吸收比标准研制及其特性表征分析 被引量:1

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摘要 研究采用原子层沉积(ALD)工艺,利用垂直碳纳米管阵列(VACNTs)的稀疏结构和碳纳米管本身具有的中空结构,探索制备具有超黑性质的垂直生长碳纳米管阵列薄膜,研究测试材料在(500~1000)nm绝对吸收比,调节阵列结构,实现高吸收比标准片的研制。
作者 康品春
出处 《中国计量》 2020年第2期91-93,共3页 China Metrology
基金 国家重点研发计划“国家质量基础的共性技术研究与应用”重点专项“多参量高稳定度计量标准器的研制”项目(项目编号:2018YFF0212400)支持.
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