移动加热源法制备单层硒化镓晶体

Fabrication of monolayer gallium selenide crystal by moving the heating source

为了解决硒化镓(GaSe)晶体制备困难、化学性能差的问题,对GaSe晶体传统的化学汽相沉积制备方法进行了改进,采用移动加热源法制备GaSe晶体。搭建了GaSe晶体的制备装置,通过单片机精确调控制备晶体的高温炉的加热温度、移动位置等参数,并采用光学显微镜和原子力显微镜对所制备的GaSe晶体进行辅助表征。研究表明,利用移动加热源法可以制备出表面光滑且尺寸较大的单层二维GaSe晶体。由于对机电设备实现了自动精密移动,可对单层二维GaSe晶体实现高质量大批量的制备,有利于GaSe晶体在光电子学和纳电子学中的广泛应用。

In order to solve the problem of difficulty in preparation of gallium selenide(GaSe)crystals and poor chemical properties, the traditional chemical vapor deposition(CVD) preparation method for GaSe crystal is improved, and the moving heating source method for preparing GaSe crystal is adopted. A movable device for preparing GaSe crystals is built, driven by a single-chip microcomputer. The parameters such as heating temperature and moving position of the hightemperature furnace for preparing crystals are precisely controlled, and the characterization of the prepared GaSe crystal is carried out by optical microscopy(OM) and atomic force microscopy(AFM). According to this research, the monolayer smooth-faced large two-dimensional GaSe crystal is obtained by moving the heating source method. Due to the automatic precision movement of the electromechanical equipment, the high-quality large-scale production of monolayer twodimensional GaSe crystals is realized, which is conducive to the wide application of GaSe crystals in optoelectronics and nanoelectronics.