HfO2基铁电场效应晶体管读写电路的单粒子翻转效应模拟

Single-event-upset effect simulation of HfO2-based ferroelectric field effect transistor read and write circuits

使用器件-电路仿真方法搭建了氧化铪基铁电场效应晶体管读写电路,研究了单粒子入射铁电场效应晶体管存储单元和外围灵敏放大器敏感节点后读写数据的变化情况,分析了读写数据波动的内在机制.结果表明:高能粒子入射该读写电路中的铁电存储单元漏极时,处于"0"状态的存储单元产生的电子空穴对在器件内部堆积,使得栅极的电场强度和铁电极化增大,而处于"1"状态的存储单元由于源极的电荷注入作用使得输出的瞬态脉冲电压信号有较大波动;高能粒子入射放大器灵敏节点时,产生的收集电流使处于读"0"状态的放大器开启,导致输出数据波动,但是其波动时间仅为0.4 ns,数据没有发生单粒子翻转能正常读出.两束高能粒子时间间隔0.5 ns先后作用铁电存储单元漏极,比单束高能粒子产生更大的输出数据信号波动,读写"1"状态的最终输出电压差变小.

Ferroelectric field effect transistor(FeFET) is a promising memory cell for space application. The FeFET can achieve non-destructive reading, and has the advantages of simple structure and high integration.Ferroelectric thin film’ s size effect, retention performance and radiation resistance of ferroelectric thin films directly determine the performances of FeFET devices. The HfO2 is widely used as a dielectric in complementary metal oxide semiconductor(CMOS) device and can solve the common integration problems for ferroelectric materials due to its CMOS compatibility. When the HfO2-based FeFETs are applied to aerospace electronics, the effects of various radiation particles need to be considered. The HfO2-based FeFET memory is still in the experimental stage, and there are no products of HfO2-based FeFET chips available from the market,so it is difficult to carry out experimental research on its single particle effect In the case of lacking the finished products of HfO2-based FeFET devices, using the device-hybrid simulation method to study the HfO2-based FeFET single-particle effect is a necessary and feasible content for the research on HfO2-based FeFET singleparticle effects. In this paper, the device-circuit simulation method is used to build a read-write circuit of HfO2-based ferroelectric field-effect transistor. The change of read and write data after a single particle is incident on a ferroelectric field effect transistor memory cell and a sensitive node of a peripheral sense amplifier is studied,and the internal mechanism of read and write data fluctuation is analyzed. The results show that when highenergy particles enter into the drain of the ferroelectric memory cell in the read-write circuit, the memory cells in the "0" state generate electron-hole pairs, which accumulate inside the device, causing the gate electric field strength and ferroelectricity to increase, and the memory cell in the "1" state has a large fluctuation in the output transient pulse voltage signal due to the charge injection of the source, indicating that the ferroelectric memory cell has a good performance against particle flipping;when high-energy particles enter into the amplifier’s sensitive node, a collection current is generated, causing the amplifier in the state of reading "0" to turn on, and the output data to fluctuate. Owing to the fluctuation time being only 0.4 ns, the data does not have single-particle flipping energy under normal readout, and the HfO2-based FeFET read-write circuit has excellent resistance to single particles. When two beams of high-energy particles act on the drain of a ferroelectric memory cell successively in a time interval of 0.5 ns, the output data signal fluctuates more than in the case of a single beam of high-energy particles, and the final output voltage difference in the reading and writing "1" state becomes smaller.