高温刻蚀硼掺杂金刚石电极材料的形貌与电化学性能

Morphology and electrochemical performance of high temperature etching boron doped diamond electrode materials

采用热丝化学气相沉积法在硅表面制备硼掺杂金刚石电极薄膜,在800℃热处理氧化刻蚀后,得到表面具有不规则孔隙结构的多孔硼掺杂金刚石薄膜电极,研究热处理刻蚀时间对电极表面形貌及材料内sp^3相碳与sp^2相碳的比例(sp^3/sp^2)的影响。结果表明,热处理的最佳时间为30min,热处理后电极的电化学活性面积是未经热处理电极的2.14倍。用硼掺杂金刚石电极对以活性蓝19作为目标有机物废水进行降解,经过热处理的电极对活性蓝19色度移除率是未经热处理电极的2.43倍,废水中的化学需氧量移除率是未经热处理电极的1.89倍,且达到相同化学需氧量移除率的能耗低于未处理电极的能耗。该刻蚀技术未造成硼掺杂金刚石电极表面污染,适用于大面积刻蚀以提高电极比表面积,在水处理领域具有广阔的应用前景。

The boron doped diamond electrode was prepared by hot filament chemical vapor deposition,and then heattreated at 800℃for oxidation to obtain the boron doped diamond electrode with irregular pore structure.The effects of heat-treatment etching time on the surface morphology and the ratio of Sp^3 carbon and Sp^2 carbon(Sp^3/Sp^2)of the electrode were studied.The results show that the best time of heat treatment is 30 minutes,and the electrochemical active area of the electrode after heat treatment is 2.14 times of that without heat treatment.Boron doped diamond electrode is used to degrade the organic wastewater with Reactive Blue 19 as the target,the color removal rate of Reactive Blue 19 from the treated electrode is 2.43 times than that from the untreated electrode,the removal rate of chemical oxygen demand from the electrode after heat treatment is 1.89 times than that from the electrode without heat treatment,and the energy consumption to achieve the same chemical oxygen demand removal rate is lower than that of untreated electrode.This etching technology does not pollute the surface of boron doped diamond electrode.It is suitable for large area etching to improve the specific surface area of the electrode,and has a broad application prospect in the field of water treatment.