摘要
Complex oxide interfaces have been one of the central focuses in condensed matter physics and ma-terial science.Over the past decade,aberration corrected scanning transmission electron microscopy and spectroscopy has proven to be invaluable to visualize and understand the emerging quantum phenomena at an interface.In this paper,we briefly review some recent progress in the utilization of electron microscopy to probe interfaces.Specifically,we discuss several important challenges for electron microscopy to advance our understanding on interface phenomena,from the perspective of variable temperature,magnetism,electron energy loss spectroscopy analysis,electronic symmetry,and defects probing.
基金
supported by the US Department of Energy(DOE)under Grant No.DOE DE-SC0002136.Z.W.and Y.Z.acknowledge the support by the U.S.Department of Energy,Office of Basic Energy Science,Division of Materials Science and Engineering,under contract no.DESC0012704
H.G.acknowledges the support by Shanghai Municipal Natural Science Foundation(No.19ZR1402800)
Shanghai Municipal Natural Science Foundation(No.18JC1411400).
