SiO2对Tb3+掺杂ZnO1-xSx发光材料性能的影响

Influence of SiO2 on property of Tb3+∶ZnO1-xSx luminescent material

采用溶胶凝胶-沉淀法,制备以ZnO1-xSx-SiO2为基质掺杂Tb3+发光材料,并通过激发光谱、发射光谱以及红外光谱、X射线衍射等手段研究了材料的发光性质和结构,重点研究了SiO2掺入对发光材料发光性能的影响。结果表明:SiO2的掺入能显著地提高ZnO1-xSx-SiO2∶Tb3+发光材料的发光性能,并确定其最佳激发波长为377nm,最佳退火温度为800℃。结构研究确定了ZnO1-xSx-SiO2∶Tb3+发光材料中主要存在Si-O-Si键、Zn-S键和Si-O4基团,属于晶态。最后依据结构对材料发光机理进行了推测。

The ZnO1-xSx-SiO2 doped by Tb3+ luminescent materials were prepared by sol-gel precipitation method.The luminescence properties and structure of the materials were studied by excitation spectroscopy,emission spectroscopy,IR and XRD.The focus was the effect of SiO2 incorporation on the luminescence properties of the materials.The results shown that the incorporation of SiO2 can significantly improve the luminescence properties of the materials,and determined the optimum excitation wavelength of the materials was 377 nm,the optimum annealing temperature 800℃.Structural studies determined that Si-O-Si bonds,Zn-S bonds and Si-O4 groups were mainly present in the materials,which belonged to crystalline.Finally,the luminescence mechanism of the materials was presumed based on the structure.