等离子体增强技术在镀铜玻璃衬底上低温制备GaN薄膜

Low-temperature Grown GaN Films Based on Copper-Glass Substrate with Plasma Enhanced Technology

以三甲基镓(TMGa)和氮气(N2)分别作为镓和氮反应源,采用电子回旋共振等离子体增强金属有机物化学气相沉积(ECR-PEMOCVD)技术在镀铜玻璃衬底上沉积出氮化镓(GaN)薄膜,采用高能电子衍射(RHEED)、X射线衍射(XRD)、原子力显微镜(AFM)和光致发光(PL)测试手段,表征分析TMGa流量对GaN薄膜的结晶性能、光学性能及表面形貌特性的影响。结果表明,TMGa流量对所制备的薄膜性能的影响很大, TMGa体积流量为1.4 mL/min时,GaN薄膜具有较强的c轴择优取向和良好的表面光滑度,晶粒较大且均匀,室温PL光谱显示在354 nm处有较高强度的光致发光峰,因带隙调制而产生光学带隙的蓝移。

High-quality gallium nitride(GaN) thin film materials were deposited on copper-glass substrates by electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition(ECR-PEMOCVD) using trimethylgallium(TMGa) and nitrogen(N2) as reaction sources for gallium and nitrogen, respectively. High-energy electron diffraction(RHEED), X-ray diffraction(XRD), atomic force microscope(AFM) and photoluminescence(PL) test were used to characterized and analyzed the effect of TMGa flow on the crystalline, surface morphology and optical property of GaN thin films. The results show that TMGa flow has a great influence on the as-grown film performance. The GaN film has strong c-axis orientation and good surface smoothness with the uniform surface and larger grain size under the optimized TMGa flow rate of 1.4 mL/min. The prepared GaN thin film has a relatively high photoluminescence peak at 354 nm at room temperature and produces an optical bandgap blue shift due to bandgap modulation.