退火温度对Zn0.3Fe2.7O4薄膜电磁性能的影响

Effects of Annealing Temperature on the Electromagnetic Properties of Zn0.3Fe2.7O4 thin Films

采用化学共沉淀法制备Zn0.3Fe2.7O4粉体,压制成高密度靶材,用射频磁控溅射法制备成膜。使用XRD、VSM、磁-电综合测试系统研究不同退火温度对样品磁性能及磁电阻的影响。结果表明:退火温度影响薄膜的晶化程度,600℃退火样品可得到较高的饱和磁化强度;磁电阻随着退火温度的升高大致呈先增加后减小的趋势;常温测得300℃退火样品,磁电阻达到最大值2.93%。

Zn0.3Fe2.7O4 powder was obtained by chemical co-precipitation, and it was pressed into high density target material. The films were then made by rf magnetron sputtering. XRD, VSM and magnetoelectric synthesis test system were used to study the effects of different annealing temperatures on the samplemagnetic property and magnetoresistance. The results show that the annealing temperature affects the crystallization degree of the film, and the samples with high saturation magnetization can be obtained by annealing at 600 ℃. With the increase of annealing temperature, the magnetoresistance follows the trend of increasing at first and then decreasing. The annealed sample at 300 ℃ was made at room temperature,and the magnetoresistance reached a maximum value of 2.93%.