低失调电压双极运放的单粒子瞬态特性研究

Study on the SET Characteristics of Low Offset Voltage Bipolar Operational Amplifiers

在Ne、Fe、Kr、Xe、Ta五种重离子入射条件下获得了运放的SET幅值-宽度分布,发现SET脉冲具有宽、窄两种形态。在SET幅值-宽度特性基础上,采用概率密度方法获得了任意SET阈值下散射截面与LET的关系。考虑入射深度与器件敏感区域的匹配,根据产生的电荷量,可对重离子-激光的SET进行关联,以便获得等效重离子的激光能量。激光与重离子的对比试验表明,选取恰当的激光能量,能够反映重离子产生的SET幅值。研究结果为双极模拟集成电路抗SET选型评估及激光试验条件的选取提供了参考。

The amplitude-width characteristics of SET in operational amplifiers was studied by Ne, Fe, Kr, Xe, Ta, and two kind of waveforms, short and long pulse, were discriminated. On the base of amplitude-width characteristics, the relationship between the scattering cross section and the LET with any SET threshold was calculated through the method of probability density. Considering the match between the heavy ion’s incidence depth and the device’s sensitive volume, the heavy ion and laser induced SET was correlated through carrier generation. Then the laser energy with equivalent heavy ion LET was found. The validation experimental results indicated that the SET caused by heavy ions could be simulated by laser with a suitable energy. Above results provided support for heavy ion hardness assurance lot acceptance testing(HALAT) of SET in bipolar analog ICs and test condition selection for laser.