摘要
本文综述了用于193 nm深紫外光刻胶的主体成膜树脂的种类及常用合成单体的研究进展,包括聚(甲基)丙烯酸酯体系、环烯烃-马来酸酐共聚物(COMA)体系、乙烯醚-马来酸酐共聚物(VEMA)体系、降冰片烯加成聚合物体系、环化聚合物体系、有机-无机杂化树脂体系以及光致产酸剂(PAG)接枝聚合物主链型等,并分析了目前关于曝光、分辨率和抗蚀刻性能方面存在的问题及未来的发展方向。
The research progress of the main matrix resins and common synthetic monomers for 193 nm deep UV photoresist was reviewed.The film-forming resin includes poly(methyl)acrylate,cycloolefin-maleic anhydride(COMA),ethylene ether-maleic anhydride(VEMA),norborneene addendum polymer,cyclized polymer,organic-inorganic hybrid resin,and PAG graft on polymer backbone.The existing problems about exposure,resolution and etch resistance and the future development direction were also discussed.
作者
魏孜博
马文超
邱迎昕
WEI Zibo;MA Wenchao;QIU Yingxin(Yanshan Branch,Sinopec BRICI,Beijing 102500,P.R.China;Rubber and Plastic Synthesis National Engineering Research Center,Beijing 102500,P.R.China)
出处
《影像科学与光化学》
CAS
2020年第3期409-415,共7页
Imaging Science and Photochemistry
基金
中石化总部项目(G3365-2019-Z1912)资助。
关键词
光刻胶
成膜树脂
曝光
分辨率
抗蚀刻性能
photoresist
matrix resin
exposure
resolution
etch resistance
