n型氧化亚铜薄膜的制备及其光电化学特性

Preparation and Photoelectrochemical Properties of N-type Cuprous Oxide Films

采用三电极系统在硫酸铜-乳酸体系中电化学沉积法制备Cu2O薄膜,控制电沉积溶液的温度和pH得到n型Cu2O薄膜,并通过光电流(I-t)测试、莫特-肖特基(M-s)曲线测试薄膜的光电性能。结果表明当pH值为8.5~10时,成功地制备出了n型Cu2O薄膜,且当电解液的pH值为8.5,温度为60℃时,n型Cu2O薄膜光电性能最佳。对Cu2O薄膜进行退火处理,有助于改善氧化亚铜薄膜的光电性能。在此基础上,我们对n型Cu2O薄膜进行不同离子掺杂。离子的掺杂能继续提高Cu2O薄膜的光电性能。其中当Cl-为40 mM条件下,Cu2O薄膜的光电化学性能最佳。

Cu2O thin films are synthesized by three-electrode electrochemical deposition in a CuSO4-lactic acid electrolyte.The n-type Cu2O thin film is obtained by controlling the temperature and pH value of electrodeposition solution,and the Cu2O thin films are examined by the photocurrent(I-t),the Mott-schottky(M-s)to evaluate their photoelectric properties.It is shown that the n-type Cu2O could be electrodeposited when the electrolyte pH is 8.5-10,and when the electrolyte pH value of 8.5,the temperature of 60℃,the n-type Cu2O film photoelectric performance shows best.It is benefit for improving the photoelectric properties by annealing the Cu2O film.In addition,the photoelectric properties of n-type Cu2O films can be enhanced by doping with different ions.When the Cl-is 40 mM,the photoelectric performance of Cu2O film is the best.