GZO薄膜溅射工艺对性能的影响研究

Study on Influence of Sputtering Process on Properties of GZO Thin Film

透明导电氧化物(TCOs)薄膜近来发展迅速,旨在研究GZO薄膜溅射功率变化对其结晶性能、表面形貌、电学性能以及光学性能的影响。研究结果表明,在采用直流磁控溅射制备GZO薄膜时,存在一个较佳溅射功率范围,有利于促进GZO薄膜粒子扩散迁移,生长及结晶性能的提升,薄膜内载流子浓度和霍尔迁移率的增加,优化薄膜电学性能。同时GZO薄膜表面由蜂窝状形貌转变为颗粒状形貌,薄膜透光性能相对较好。

Transparent conductive oxides(TCOs)films have recently developed rapidly.This paper studies the effects of GZO thin film sputtering power on its crystallization property,surface morphology,electrical property and optical property.The results show that there is a better sputtering power range when preparing GZO thin films by DC magnetron sputtering,which is beneficial to promote the diffusion migration,growth and crystallization performance of GZO thin films,the carrier concentration and Hall mobility increase in the film.The electrical property of the film was optimized.At the same time,the surfaces of GZO films changed from honeycomb morphology to granular morphology,and the light transmission performance was relatively excellent of the films.