倒金字塔型多晶黑硅的制备、表征及性能研究

Preparation,characterization and property study of black multi-crystalline silicon with inverted pyramid structure

金刚线切多晶硅片具有加工效率高、硅片厚度薄以及无需添加SiC微粉等研磨浆料的特点,成为了一种新兴的硅片切割技术。然而传统酸制绒工艺很难对金刚线切多晶硅片起到很好的制绒效果,限制了其在实际生产中的推广。多晶硅表面的陷光结构对其转换效率具有重要影响,但多晶电池表面纳米级别孔洞绒面结构会导致很高的载流子复合损失。通过含有HF/NH4F/H2O2及其他弱碱性物质的混合溶液对硅片表面的纳米级孔洞结构进行修饰,更改反应时间,得到了多组具有微米级规则倒金字塔结构的黑硅多晶电池。对不同倒金字塔结构的黑硅样品进行表征并测试其实际性能,得到了最优的反应时间为240 s。

Diamond wire sawn multi-crystalline silicon(DWSmc-Si)with several superiorities,including faster fold slicing speed,thinner saw-damage layer and and no need to add abrasive slurry such as SiC fine powder,has been a general trend in the PVmarket.However,in the traditional acid texturing process,it is difficult to achieve a good texturing effect on DWSmc-Si wafer,thus limits its promotion in actual production.The light trapping structure on the surface of wafer has an important influence on its conversion efficiency.However,the nano-void texture on the surface of wafer leads to higher carrier recombination loss.The nano-void texture on the surface of wafer was modified by a mixed solution containing HF/NH4F/H2O2 and other weakly alkaline substances.By changing the reaction time,many samples of black silicon cells with a micron-scale regular inverted pyramid structure were obtained.The black silicon samples of different inverted pyramid structures were characterized and electrical performance were tested,it was found that the optimal reaction time was 240 s.