基于金属基复合材料的硅通孔热应力仿真分析

Thermal stress simulation of through-silicon via based on metal matrix composites

硅通孔(TSV)技术是三维集成电路中的关键技术,对信号传输以及热量的传导起到关键的作用,其热可靠性的问题一直都是研究热点。基于Comsol Mulitiphsics平台,通过有限元仿真分析,研究了金属基复合材料对TSV热应力的影响。并进一步研究了在不同通孔直径以及不同TSV高度下,碳纳米管(CNTs)、碳纳米管铝(CNTs/Al)以及碳纳米纤维铜(CNFs/Cu)等复合材料和传统金属材料的等效热应力情况。结果表明:与传统金属材料相比,金属基复合材料CNTs/Al以及CNFs/Cu均能有效降低TSV的热应力,提高TSV的热可靠性;并且对于CNTs含量不同的金属基复合材料,其TSV的等效热应力也会有所不同,需综合考虑合理选择CNTs的含量。

Through-silicon via(TSV) technology is a technology in 3 D integrated circuit, which plays a critical role in signal transmission and heat conduction. The TSV thermal reliability has always been a research hotspot. Using Comsol Mulitiphsics platform, a finite element simulation software, metal matrix composites was studied on the thermal stress of TSV. The equivalent thermal stresses of carbon nanotubes(CNTs), carbon nanotubes aluminum(CNTs/Al), carbon nanofiber copper(CNFs/Cu) composites and conventional metal materials were further studied at different through-hole diameters and heights of TSV. The results show that CNTs/Al and CNFs/Cu can effectively reduce the thermal stress and improve the thermal reliability of TSV in contrast to traditional metal materials. In addition, the equivalent thermal stress of TSV of metal matrix composites with different content of CNTs can also vary. As a result, the content of CNTs should be rationally determined after comprehensive consideration.