一种新型大尺寸多晶硅片晶向的光学扫描方法

A NEW OPTICAL SCANNING METHOD FOR CRYSTAL ORIENTATION OF LARGE-SIZE POLYSILICON WAFER

提出了一种新型扫描大尺寸多晶硅片晶向的方法,该方法以晶粒表面光学3D各向形貌的分析为基础,通过2部相机直接采集得到晶粒的2D反射谱;每种不同晶向有其特定的表面形貌及对应的特征反射谱线,该特征反射谱线由理论推测而得,并与实验结果相符;晶粒的晶向指数可以由特征谱线峰值计算得出。本测试实现了对100×100 mm^2碱制绒硅片的晶向检测,测试时间小于10 min,检测精度小于1.34°。这种快速扫描晶向的方法可以用于高效多晶硅片的研发。

This paper presents a method for scanning the entire crystal orientation of polysilicon wafer based on an analysis of the three-dimensional(3D)isotropic topography.The 2D isotropic morphology of the crystal was directly acquired by two cameras via recording the reflected light signal.Each different crystal orientation has a specific surface morphology and a corresponding characteristic reflection spectrum.The characteristic reflection spectrum is obtained by theoretical inference and is consistent with the experimental results.Moreover,the crystal orientation index of the crystal grains can be calculated from the characteristic reflection spectrum.In this paper,the crystal orientation of polysilicon wafers with an area of 100×100 mm^2 and after alkaline texturing is tested.The test time is less than 10 minutes and the detection accuracy is less than 1.34°.This rapid crystal orientation scanning method can be used for the development of high-efficiency polysilicon wafers.