Applied Materials Centura系列单片式硅外延炉的先进性研究

Study on Advancement of Single-wafer Silicon Epitaxy Reactor of Applied Materials Centura Series

随着半导体元器件制造要求的不断提高,对硅外延片的质量要求也不断提高。一方面,为了改善硅外延片的厚度和电阻率均匀性,硅外延炉从多片式逐步转向单片式发展;另一方面,硅外延片的尺寸从小尺寸(4英寸)向大尺寸(8英寸、12英寸)发展。鉴于面向大尺寸的单片式硅外延炉将是未来主导硅外延材料生长的主流设备,对Applied Materials Centura系列单片式硅外延炉的先进性进行分析,分别介绍其设备结构、工艺性能、产量效率等特点,进而提出一些可能需要改进的方向。

As the manufacturing demand of semiconductor device is increasing,the quality of silicon epitaxial wafer should be also improved.On one hand,in order to improve the thickness and resistivity uniformity of silicon epitaxial wafer,silicon epitaxy reactor has turned from multipe-wafer type to single-wafer type.On the other hand,the diameter of silicon epitaxial wafer has also turned from the small size(4 inches)to the large size(8 inches and 12 inches).In view of the fact that large-size single-wafer silicon epitaxy reactor will be the mainstream equipment that will lead the production of silicon epitaxial materials in the future,the advancement of single-wafer silicon epitaxy reactor of Applied Materials Centura series is analyzed.The equipment structure,process performance,production efficiency and other characteristics are introduced respectively,and some possible improvements are put forward.