摘要
本文提出了一种高带宽穿隧磁阻(Tunnel Magnetoresistance, TMR)型传感器的读出电路,电路采用chopper-stabilized amplifier技术和纹波抑制环路技术(Ripple Reduction Loop, RRL)结构实现高信号感应带宽,同时抑制输出纹波。本设计采用SMIC 0.18μm CMOS工艺,电源电压为3.3V,双通道输出,并提供±1.5mA的输出驱动器。仿真结果表明,整个读出电路共消耗电流为3.9mA,感应带宽3MHz,输入等效噪声谱密度均方根18.3nV√Hz@20KHz。
In this paper,a readout circuit of a Tunnel Magnetoresistance(TMR)sensor is proposed.The circuit combines chopper-stabilized amplifier technology with Ripple Reduction Loop(RRL)technology to achieve a wide sensing bandwidth and reduce the output ripples.This design uses SMIC 0.18μm CMOS process,with supply voltage of 3.3V,and double output drivers of±1.5mA.The simulation results show that the total current consumption of readout circuit is 3.9mA,the sensing bandwidth is 3MHz,and the input-referred RMS noise density is 18.3nV √Hz@20KHz.
作者
曾濯渠
ZENG Zhuo-qu(College of Physics and Information Engineering,Fuzhou University,Fuzhou 350116,China)
出处
《中国集成电路》
2020年第5期50-54,91,共6页
China lntegrated Circuit
