摘要
采用固相反应法制备了以V-Bi置换Ti4+的LiZnTi铁氧体,获得较低的铁磁共振线宽和矫顽力,同时还保证其具有较高的饱和磁化强度、剩磁比和烧结密度。利用X射线衍射仪和扫描电子显微镜(SEM)等分析了在880℃和900℃烧结温度下,V-Bi二元取代对LiZnTi铁氧体的微观结构和电磁性能的影响。研究结果表明,其微观形貌与V-Bi取代量密切相关,适量的V-Bi取代可改善材料的微观结构,但过量的V-Bi会阻碍晶粒的生长。随着V-Bi取代量的增加,样品的饱和磁化强度Bs、剩磁比先增大后减小,铁磁共振线宽ΔH、矫顽力Hc先减小后逐渐增大。
V-Bi substitution Ti of LiZnTi ferrites were prepared by conventional ceramic method in this paper.The LiZnTi ferrites with V-Bi substitution have low ferromagnetic resonance(FMR)linewidth(ΔH),microwave dielectric loss(tanδε),coercivity(Hc)and high saturation magnetization(Bs),remanence ratio,and sintered density.The effects of V-Bi binary substitution on the microstructures and magnetic properties of LiZnTi ferrites sintered at 880℃or 900℃were studied by X-ray diffraction(XRD),scanning electron microscopy(SEM)and so on.The results show that the micro-morphology was closely related to the content of V-Bi.The micro-structure of samples could be improved by appropriate V-Bi content,but excessive V-Bi would hinder the growth of grains and deteriorate the micro-morphology of samples.With the increase of V-Bi substitution,the saturation magnetization Bs and remanence ratio of the sample first increase and then decrease,while the ferromagnetic resonance linewidth(ΔH),coercivity(Hc)decrease first and then increase gradually.
作者
邱华
贾利军
沈琦杭
解飞
张怀武
QIU Hua;JIA Li-jun;SHEN Qi-hang;XIE Fei;ZHANG Huai-wu(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China)
出处
《磁性材料及器件》
CAS
CSCD
2020年第2期1-5,共5页
Journal of Magnetic Materials and Devices