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Sb掺杂ZnO纳米线的制备与光电性能研究 被引量:1

Optoelectronic properties of synthesized Sb doped ZnO nanowires
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摘要 采用化学气相沉积法在蓝宝石(c-Al2O3)衬底上外延制备了不同含量的Sb掺杂氧化锌(ZnO)纳米线,并通过SEM,XRD,XPS,PL以及霍尔效应仪等测试手段对掺Sb后的ZnO纳米线进行了形貌、成分以及光电性能的表征。XPS测试结果表明,Sb原子成功的掺入到了ZnO纳米线晶格中。PL光谱分析显示,随着Sb掺杂含量的增加,纳米线的缺陷浓度增加,纳米线的结晶性变差。霍尔效应测试结果表明,在一定的掺杂含量范围(3%~4.5%)内,纳米线呈p型导电性。 In this paper,different content of antimony(Sb)doped znic oxide(ZnO)nanowires were epitaxially deposited on sapphire(c-Al2O3)by chemical vapor deposition method.The morphology,composition and photoelectric properties of Sb doped ZnO nanowires were characterized by SEM,XRD,XPS,PL and Hall effect measurement,respectively.The XPS results showed that Sb atoms were successfully incorporated into ZnO nanowires crystal structure.The PL spectral analysis showed that as the Sb doping content increasing,the defect concentration of the nanowire increased,and the crystallinity of the nanowire deteriorated.The Hall effect test results showed that the nanowires were exhibit p-type conductivity within the doping content range of 3~4.5%.
作者 苏明明 张唐磊 丁宝玉 沈杰 张翔晖 SU Mingming;ZHANG Tanglei;DING Baoyu;SHEN Jie;ZHANG Xianghui(Hubei Key Laboratory of Ferro&Piezoelectric Materials and Devices,Faculty of Physics&Electronic Science,Hubei University,Wuhan 430062,China)
出处 《功能材料》 EI CAS CSCD 北大核心 2020年第5期5092-5096,5102,共6页 Journal of Functional Materials
基金 国家杰出青年科学基金资助项目(11504098)。
关键词 Sb掺杂 ZNO纳米线 P型掺杂 光电性质 Sb dope ZnO nanowires p-type doping photoelectric
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