类阳极氧化铝纳米结构LED的研究

Research on Anodic Aluminum Oxide Nanostructured LEDs

LED具有高效、节能和环保等优势,广泛应用于照明领域,提高LED的发光效率一直是该领域的研究难点与热点。为了降低GaN材料与空气界面的全反射现象,提高光提取效率,本研究探讨了类阳极氧化铝AAO(Anodic aluminum oxide)纳米结构LED器件的制备和性能。通过电感耦合等离子体(Inductively coupled plasma, ICP)刻蚀工艺的调控,在p-GaN层表面制备了大面积有序孔洞纳米结构阵列,可获得孔径250~500nm,孔深50~150nm的准光子晶体结构,从而大幅提高了LED的发光强度,其中孔径400 nm、深度150 nm的纳米阵列LED相比于没有纳米阵列的LED发光强度提高达3.5倍。

LED has the advantages of high efficiency, energy saving and environmental protection. It is widely used in the field of lighting. Improving the luminous efficiency of LED has always been a research difficulty and hot spot in this field. To reduce the total reflection phenomenon between GaN material and air and to improve the light extraction efficiency, fabrication and properties of the anodized aluminum oxide(AAO) nanostructured LED device were studied. Through inductively coupled plasma(ICP) etching process, large-area ordered pore nanostructure arrays were successfully fabricated on the surface of p-GaN layer, and the quasi-photonic crystal structure with apertures of 250-500 nm and pore depths of 50-150 nm were obtained. The crystal structure greatly increases the luminous intensity of the LED, and the nano-array LED with pore diameter of 400 nm and depth of 150 nm is improved by 3.5 times in contrast to the LED without the nano-array.