激光刻划功率对CIGS光伏电池激光划线位置透光的影响

The influence of laser power on light transmission of laser scribing position in CIGS solar cells

本文采用直接磁控溅射在普通钠钙玻璃衬底制备SiO2阻挡层、Mo背电极、CIGS吸收层、ZOS缓冲层、ZnO窗口层和AZO前电极,其中CIGS为四元陶瓷靶材,SiO2阻挡层、Mo背电极厚度分别为50nm和800nm,硒化退火采用H2Se为硒源,研究P1划刻功率对电池透光的影响,并分析了其对电池性能的影响。研究表明,当P1激光器波长为1064nm,频率为65KHz,划线速度为2000mm/s时,P1划线对SiO2阻挡层的损伤是影响硒化法制备CIGS光伏太阳能电池划线位置透光的重要影响因素,P1划刻功率是重要影响参数。当P1划刻功率为1.4W时,P1划线未对SiO2阻挡层造成损伤,划线位置不透光,电池电流密度最大,且填充因子和转化效率最高。当P1划刻功率增大时,在划开Mo的同时,对SiO2阻挡层造成损伤,微观表现为斑点,且功率越大,斑点密度越大,透光表现为点透光到线透光。同时,由于透光造成电池有效面积减少,导致电池电流密度降低,并最终影响填充因子和转化效率的降低。但进一步降低P1划刻功率,易造成划线光斑减小,划线位置出现毛刺,存在不能将背电极Mo划开的风险,导致电池电流密度和开压降低,并导致填充因子和转化效率的降低。

In this paper,SiO2 barrier Layer,Mo back electrode,CIGS absorber layer,ZOS buffer layer,ZnO window layer and AZO front electrode were prepared by magnetron sputtering on common soda lime glass.CIGS was a quaternary ceramic target.The thickness of SiO2 barrier and Mo back electrode are 50 nm and 800 nm respectively.H2 Se was used as selenium source in selenium annealing.This paper researched the influence of the power of P1 on the light transmission of the solar cells,and analyzed the influence on the performance of the solar cells.The results showed that when the wavelength of P1 laser was 1064 nm,the frequency was 65 khz,and the scribing speed was 2000 mm/s,the damage of P1 scribing to SiO2 barrier was an important factor affecting the light transmission of the scribing position of CIGS solar cells prepared by selenium method,and the scribing power of P1 was an important parameter.When the power of P1 scribing is 1.4 W,P1 scribing did not damage the SiO2 barrier layer,the scribing position was opaque,Jsc was the highest,and the FF and Eff were the highest.When t increased he power of P1,Mo would be scratched and SiO2 barrier would be damaged.The microscopic appearance is spots.As the power of P1 higher,the spot density was increasing,and the light transmission was from point to line.Due the to the light transmission,effective area of the solar cell reduced.So Jsc,FF were reduced.However,if the power of P1 was further reduced,the scribing spot would be reduced,and the scribing position will be burred.There was a risk that Mo can’t not be scratched,which will reduce the Jsc and Voc of the solar cell,and lead to the decrease of FF and conversion Eff..