Si基超薄势垒InAlN/GaN HEMT开关器件小信号模型

Small-Signal Model of the Si-Based Ultrathin Barrier InAlN/GaN HEMT Switching Device

为了更好地表征Si基超薄InAlN/GaN HEMT开关器件的特性和开发更精确的开关电路模型,基于0.25μm HEMT工艺制备了不同栅极电阻的开关器件,提出了附加10 kΩ栅极电阻的器件结构,并对开关器件进行了小信号模型分析。采用传统的去嵌结构提取了开关器件的寄生电容、电感和电阻参数来得到相应的本征参数。采用误差因子评估模型的准确度,结果表明模型拟合和实测的S参数基本吻合。最后将模型应用在Ku波段单刀双掷(SPDT)开关电路的设计中,实测的开启状态下该电路的插入损耗小于2.28 dB,输入回波损耗大于10 dB,输出回波损耗大于12 dB;关断状态下其隔离度大于36.54 dB。所提出的Si基InAlN/GaN HEMT模型可以为Si基HEMT的电路设计和集成提供一定的理论指导。

In order to better characterize the characteristics of Si-based ultra-thin InAlN/GaN HEMT switching devices and develop more accurate switching circuit models, switching devices with different gate resistances were prepared based on the 0.25 μm HEMT process, and a device structure with an additional 10 kΩ gate resistance was proposed. Moreover, a small signal model analysis of the switching device was performed. The parasitic capacitance, inductance and resistance parameters of the switching device extracted with the traditional de-embedding structure were used to obtain the correspon-ding intrinsic parameters. The error factor was used to evaluate the accuracy of the model. The results show that the fitting and measured S parameters of the model are basically consistent. Finally, the model was applied to the design of the Ku-band single-pole double-throw(SPDT) switching circuit. The mea-sured on-state insertion loss is less than 2.28 dB, the input return loss is greater than 10 dB, and the output return loss is greater than 12 dB. The off-state isolation is greater than 36.54 dB. The proposed Si-based InAlN/GaN HEMT model can provide theoretical guidance for the design and integration of Si-based HEMT circuits.