相变材料Ge2Sb2Te5的性质及其面向新型数据存储的应用

Properties of Phase Change Material Ge2Sb2Te5 and Its Application for Novel Data Storage

信息时代产生的海量数据驱动着计算机存储架构的革新,高性能的非易失性存储器和存算一体的神经形态计算成为存储体系的发展方向。首先,介绍了相变材料Ge2Sb2Te5的阻变性质的机理与应用,详细阐述了相变存储器的发展以及神经形态计算的实现。然后,讨论了基于Ge2Sb2Te5铁电性质的存储器、基于Ge2Sb2Te5介电性质的光子存储单元和基于Ge2Sb2Te5应变作用的高迁移率晶体管。最后,讨论了Ge2Sb2Te5和n型硅等材料的异质结结构在器件中的应用。基于Ge2Sb2Te5材料多种特性的新型存储器件必将在未来存算一体的数据处理中扮演重要的角色。

The massive data generated in the information era have been driving an innovation of the computer storage architecture.The high performance non-volatile memory and neuromorphic computing that integrates computing and storage are the promising routes of the storage systems.Firstly,the mechanism and application of the resistive properties of the phase change material Ge2Sb2Te5 are introduced,and the development of the phase change memory and the realization of neuromorphic computing are demonstrated in detail.Then the memory based on ferroelectric properties of Ge2Sb2Te5,the photonic memory elements based on dielectric properties of Ge2Sb2Te5 and the transistors with high mobility based on the strain action of Ge2Sb2Te5 are discussed.Finally,the application of the heterojunction structures consisting of Ge2Sb2Te5 and the materials such as n-Si in devices is discussed.The novel memory devices based on various properties of Ge2Sb2Te5will definitely play an important role in data processing of in-memory computing in the future.