摘要
基于微电子机械系统(MEMS)工艺设计并制作了一种THz垂直转接结构,该结构采用6层硅片堆叠的硅微波导形式。理论分析计算了垂直转接结构的参数,并使用三维电磁场分析软件HFSS对该结构进行了模拟仿真。设计得到了中心频率为365 GHz、带宽为80 GHz、芯片尺寸为10 mm×7 mm×2.7 mm的THz垂直转接结构。给出了一套基于MEMS工艺的硅微波导的制作流程,制作了365 GHz垂直转接结构并对其进行测试。获得的THz垂直转接结构的回波损耗随频率变化的测试结果与仿真结果基本一致。采用MEMS工艺制作的硅微波导垂直转接结构具有精度高、一致性好、成本低的特点,满足THz器件的发展需求。
A THz vertical connector with a micro waveguide stacked by the 6layers silicon wafers was designed and fabricated based on the micro-electromechanical system(MEMS)technology.The structure parameters of the vertical connector were analyzed and calculated theoretically,and the connector was simulated by the three-dimensional electromagnetic field analysis software HFSS.The THz vertical connector was designed and obtained with a center frequency of 365 GHz,a bandwidth of 80 GHz and a chip size of 10 mm×7 mm×2.7 mm.The fabrication process based on the MEMS technology for the silicon micro waveguide was presented.The 365 GHz vertical connector was fabricated and tested.And the measurement results of the variation of the return loss with the frequency for the THz vertical connector are good in accordance with the simulation results.The silicon micro waveguide vertical connector fabricated with the MEMS technology is of high accuracy,good consistency and low cost,and satisfies the development requirements of THz devices.
作者
杨志
董春晖
柏航
姚仕森
程钰间
Yang Zhi;Dong Chunhui;Bai Hang;Yao Shisen;Cheng Yujian(Science and Technology on ASIC Laboratory,Shijiazhuang050051,China;The 13th Research Institute,CETC,Shijiazhuang050051,China;School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu611731,China)
出处
《微纳电子技术》
北大核心
2020年第5期391-394,403,共5页
Micronanoelectronic Technology
