基于GaN HEMT的155~172 GHz功率放大器设计

A 155~172 GHz Power Amplifier Based on GaN HEMT Technology

设计了一款G波段GaN HEMT功率放大器。放大器采用级联结构,在每级设计中均引入了并联反馈。放大器工作频段内的小信号增益大于25 dB,3 dB带宽为17 GHz。大信号测试结果显示,在155~172 GHz饱和输出功率为14~17 dBm;在165 GHz饱和输出功率密度为17 dBm,对应的功率密度为1.25 W/mm。该功率放大器直流损耗功率为1 060 mW,峰值功率附加效率为4.7%。

A G-band GaN HEMT power amplifier(PA)was presented in this paper. Cascade structure was adopted in the PA,and parallel feedback was introduced in the design of each stage.The PA has a small-signal gain above 25 dB and 3 dB bandwidth of 17 GHz. Moreover,large-signal measurement shows that the saturated output power density is 17 dBm and the corresponding power density is 1.25 W/mm at 165 GHz. In the 155~172 GHz,the saturated output power varies from 14 dBm to 17 dBm. The nominal DC power consumption of the PA is 1 060 mW with peak power added efficiency of 4.7%.