高增益GaN基PIN雪崩二极管的制备及p-GaN层载流子浓度的估算

Fabrication of High Gain GaN Based PIN Avalanche Diode and Estimation of p-GaN Layer Carrier Concentration

介绍了GaN基pin雪崩探测器的制作过程和测试结果。制作的器件在71 V反向偏压下发生雪崩,倍增因子达到5×104。我们发现,p层载流子浓度是影响器件性能的重要参数。结合电场强度分布的分析,本文提出了一种估算p层载流子浓度的方法,进一步计算得到刚好雪崩击穿时的最大电场值为2.6 MV/cm,与以往GaN雪崩器件所报道的研究结果相似。最后,霍尔测试和SIMS测量p层载流子浓度的结果与模型计算的估算值吻合。

The fabrication process and test results of the GaN based pin avalanche detector are described in detail.The avalanche in obtained device occurs at a reverse bias of 71 V,and the multiplication factor reaches 5×104.It is found that the p-layer carrier concentration is an important parameter affecting the device performance.Combined with the analysis of electric field intensity distribution,a method to estimate the carrier concentration in p-layer is proposed,and further calculation indicates that the maximum electric field value at avalanche breakdown is 2.6 MV/cm,which is similar to the previously reported values for GaN avalanche detectors.At last,Hall test and Secondary ion mass spectroscopy(SIMS)results are consistent with those estimated by the model calculation.