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Individually resolved luminescence from closely stacked GaN/AlN quantum wells

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摘要 Investigating closely stacked GaN/AlN multiple quantum wells(MQWs)by means of cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope,we have reached an ultimate spatial resolution ofσCL=1.8 nm.The pseudomorphically grown MQWs with high interface quality emit in the deep ultraviolet spectral range.Demonstrating the capability of resolving the 10.8 nm separated,ultra-thin quantum wells,a cathodoluminescence profile was taken across individual ones.Applying a diffusion model of excitons generated by a Gaussian-broadened electron probe,the spatial resolution of cathodoluminescence down to the free exciton Bohr radius scale has been determined.
出处 《Photonics Research》 SCIE EI CSCD 2020年第4期610-615,共6页 光子学研究(英文版)
基金 National Key Research and Development Program of China(2017YFE0100300) Science Challenge Project(TZ2016003) National Natural Science Foundation of China(61734001,61521004,61774004) Deutsche Forschungsgemeinschaft(Research Instrumentation Program INST272/148-1,Collaborative Research Center SFB 787)。
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