大功率IGBT器件内部载流子控制方法综述

Survey of internal carrier control methods for high power IGBTs

绝缘栅双极晶体管(IGBT)的内部载流子控制方法对器件的导通状态电压降、关断损耗、SOA、热可靠性和瞬态稳定性等器件性能至关重要。已经报道的许多载流子控制方法都侧重于发射极(或阴极)、集电极(或阳极)和漂移区的设计。重点介绍了当前和未来几代IGBT的载流子控制方法。回顾发射极、集电极和漂移区的设计如何影响正向压降和关断能量损耗之间的权衡。最后,总结展望未来大功率IGBT器件内部载流子控制方法的发展趋势。

Internal carrier control methods for Insulated Gate Bipolar Transistors(IGBTs)are critical for the device performances such as on-state voltage drop,turn-off losses,SOA,thermal reliability and transient ruggedness,etc.Numerous carrier control methods focusing on the design of the emitter(or cathode),collector(or anode),and drift regions have been reported.This paper focuses on the carrier control methods of current and future generations of IGBTs.In particular,the designs of the emitter,collector,and drift regions and how they affects the trade-off between the forward voltage drop and the turn-off energy loss are reviewed.Finally,the development trend of carrier control in high-power IGBT devices is summarized look forward to.