基于全物理模型的模块级SRAM的SEU仿真方法

The SEU simulation of module-level SRAM based on full physical model

随着科学技术的发展和工艺尺寸的降低,单元器件的尺寸逐渐减小,使得单粒子电荷共享和单粒子翻转等效应日益严重,增加了抗辐射加固模块级SRAM设计难度,因此需要一套更为完备的仿真方法对模块级SRAM的单粒子效应敏感性进行预估,为电路加固设计提供依据和建议。基于模块级SRAM的单元结构和电路版图,利用Cogenda软件构建了模块级SRAM单粒子翻转效应仿真方法,对其敏感性进行分析,获得其单粒子翻转LET阈值,并与重离子实验结果进行对比,仿真误差为13.3%。

With the development of technology and the decrease of the process size,the scale of the single memory cell becomes smaller,causing the charge sharing and the SEU more serious,and increasing the difficulty of radiation harden design.Therefore,the accurate simulation for estimating the SEU of module level SRAM is needed to provide basis and guidance for radiation harden design.This paper summarizes the structure and the layout of SRAM,proposes a simulation of the SEU of module level SRAM using Cogenda for sensitivity analysis and the SEU LET threshold estimate.Comparison between the simulation and the heavy ion tests shows that the difference is about 13.3%.