电镀金刚石线表面磨粒密度对锯切性能影响分析

Effect of abrasive density on sawing performance of electroplated diamond wire

电镀金刚石线广泛应用于光伏太阳能和半导体行业的硅晶体切片加工,其表面的磨粒密度对锯切性能有很大影响。为了评价表面不同磨粒密度的电镀金刚石线的锯切性能,以光伏多晶硅为试件开展了锯切试验,分析了表面形貌、表面粗糙度和锯切效率的影响规律。研究结果表明:采用表面磨粒密度为210~230个/mm与290~330个/mm的两种金刚石线锯切的表面塑性沟槽所占比例较大,没有明显的较大尺寸脆性微凹坑。表面磨粒密度为210~230个/mm的金刚石线切割形成的硅片表面粗糙度最低,金刚石线表面过低或过大的磨粒密度会使硅片表面粗糙度变大。金刚石线的切割能力和锯切效率随着表面磨粒密度的增大而有所提高。综合考虑切片表面形貌和粗糙度等方面的质量要求与金刚石线的锯切能力和制造成本,建议金刚石线表面磨粒密度在210~330个/mm较为适宜。

Electroplated diamond wire is widely used in photovoltaic solar energy and semiconductor industry for silicon crystal slicing.The abrasive density on the surface of the wire has a great impact on the sawing performance.In order to evaluate the sawing performance of electroplated diamond wires with different surface abrasive densities,sawing experiments are carried out with photovoltaic polycrystalline silicon as the workpiece sample.The effects of surface morphology,surface roughness and sawing efficiency are analyzed.The results show that the ductile grooves machined by two kinds of diamond wires with surface abrasive density of 210~230 pieces/mm and 290~330 pieces/mm account for a large proportion on the sawn surface without obvious large size brittle micro-pits.The silicon wafer surface roughness formed by sawing with wire surface abrasive density of 210~230 pieces/mm is the lowest,and the surface roughness will increase if the wire surface abrasive density is too low or too high.The cutting ability and efficiency of diamond wire increase with the increase of surface abrasive density.Considering the quality requirements of sawn surface morphology and roughness,the cutting ability and manufacturing cost of diamond wire,it is suggested that the surface abrasive density should be between 210 piece s and 330 pieces/mm.