用于垂直腔面发射激光器的GaAs/AlGaAs的ICP刻蚀工艺研究

ICP Etching Process of GaAs/AlGaAs for Vertical-Cavity Surface-Emitting Lasers

采用电感耦合等离子体(ICP)刻蚀设备对应用于垂直腔面发射激光器的GaAs/AlGaAs材料进行刻蚀工艺研究。该刻蚀实验采用光刻胶作为刻蚀掩模,Cl2/BCl3作为刻蚀工艺气体,通过实验分析总结了ICP源功率、射频偏压功率和腔体压强对GaAs/AlGaAs材料和掩模刻蚀速率的影响。利用扫描电子显微镜观察不同参数条件对样品侧壁垂直度和底部平坦度的影响。最终在保证高刻蚀速率的前提下,通过调整优化各工艺参数,得到了侧壁光滑、底部平坦的圆台结构。

We use inductively coupled plasma(ICP)etching equipment to study the etching process for GaAs/AlGaAs materials used in vertical-cavity surface-emitting lasers.During the ICP etching process,photoresist is used as the etching mask,whereas Cl2/BCl3 is used as the etching gas.The ICP antenna power,radio frequency bias power,and cavity pressure in case of the GaAs/AlGaAs materials and masks are analyzed and summarized through experiments.Further,scanning electron microscopy is used to investigate the effects of different parameter conditions on the verticality and bottom flatness of the pattern sidewalls.Finally,a round-table structure with smooth sidewalls and flat bottom is obtained by adjusting and optimizing the parameters during each process to ensure a high etching rate.