摘要
The measurements of magnetization,longitudinal and Hall resistivities are carried out on the intrinsic antiferromagnetic(AFM) topological insulator ElSn2 As2.It is confirmed that our ElSn2 As2 crystal is a heavily hole doping A-type AFM metal with the Neel temperature TN=24 K,with a metamagnetic transition from an AFM to a ferromagnetic(FIM) phase occurring at a certain critical magnetic Held for the different Held orientations.Meanwhile,we also find that the carrier concentration does not change with the evolution of magnetic order,indicating that the weak interaction between the localized magnetic moments from Eu2+4f7 orbits and the electronic states near the Fermi level.Although the quantum anomalous Hall effect(AHE) is not observed in our crystals,it is found that a relatively large negative magnetoresistance (-13%) emerges in the AFM phase,and exhibits an exponential dependence upon magnetic Held,whose microscopic origin is waiting to be clarified in future research.
作者
陈奂丞
娄哲丰
周宇星
陈琴
许彬杰
陈水金
杜建华
杨金虎
王杭栋
方明虎
Huan-Cheng ChenZhe-Fcng Lou;Yu-Xing Zhou;Qin Chen;Bin-lie Xu;Shui-Jin Chei;Jian-Hua Du;Jin-Hu Yang;Hang-Dong Wang;Ming-Hu Fang(Department of Physics,Zhejiang University,Hangzhou 310027;Department of Applied Physics,China Jiliang University,Hangzhou 310018;Department of Physics,Hangzhou Normal University,Hangzhou 310036;Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093)
基金
Supported by the National Key Research and Development Program of China under Grant No.2016YFA0300402
the National Basic Research Program of China under Grant No.2015CB921004
the National Natural Science Foundation of China under Grant Nos.11974095 and 11374261
the Zhejiang Natural Science Foundation(No.LY16A040012)
the Fundamental Research Funds for the Central Universities.