摘要
在SWCNTs-TFT器件中沟道电流随栅极电压变化而发生的滞回可以达到320 V,且其滞回特性受栅压调控并具有随时间变化的特性。经研究,聚咔唑中的高电化学活性基团是造成器件中滞回现象和其时变特性的主要原因。利用聚咔唑筛选出半导体特性的SWCNTs薄膜制备TFT,可以在器件特性随时间变化的过程中动态地处理信息。通过研究阈值电压漂移与栅级电压的调控,找到了器件与生物突触间的相似性,模拟了突触可塑性功能,并利用压电薄膜作为外界输入,演示了更多可能的低功耗应用。这种具有时变特性的电子元件在新型逻辑电路和神经形态计算领域拥有广阔前景。
In SWCNTs-TFT,the hysteresis of drain current with the change of gate voltage can reach 320 V.And the hysteresis is regulated by gate voltage and varies with time.The high electrochemical activity group in polycarbazole(PCz)is the main cause of the hysteresis and time-dependent behavior.Using PCz sorted SWCNTs-TFT,information processing could be achieved during the shift of the device property.By studying the shift of threshold voltage and regulation by the gate voltage,the similarity between the device and biological synapses was found and the synaptic plasticity was simulated.Using polyvinylidene fluoride(PVDF)nanogenerator as a biologically inspired source,more potential low-power applications were demonstrated.The application of this time-dependent element may have wide applications in novel logic circuits and neuromorphic computing.
作者
周易
王盛凯
黄奇
赵杰
梁学磊
ZHOU Yi;WANG Shengkai;HUANG Qi;ZHAO Jie;LIANG Xuelei(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China;Peking University,Beijing 100871,China)
出处
《电子元件与材料》
CAS
CSCD
北大核心
2020年第6期44-49,共6页
Electronic Components And Materials
基金
国家重点研发计划(2016YFA0201902)
国家自然科学基金(61621061)
北京市自然科学基金(Z171100002017001)。