摘要
Three-dimensional(3 D)topological insulators(TIs)are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure.Rapid,low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is the key to the practical applications of TIs.Here we show that wafer-sized Bi2Te3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO2/Si substrates by magnetron cosputtering.The SiO2/Si substrates enable us to electrically tune(Bi1-xSbx)2Te3 and Cr-doped(Bi1-xSbx)2 Te3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states,such as the quantum anomalous Hall effect(QAHE).This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.
作者
郭奇勋
吴宇
徐龙翔
龚演
欧云波
刘洋
李磊磊
岩雨
韩刚
王东伟
王立华
龙世兵
张博威
曹迅
杨善武
王学敏
黄一中
刘涛
于广华
何珂
滕蛟
Qixun Guo;Yu Wu;Longxiang Xu;Yan Gong;Yunbo Ou;Yang Liu;Leilei Li;Yu Yan;Gang Han;Dongwei Wang;Lihua Wang;Shibing Long;Bowei Zhang;Xun Cao;Shanwu Yang;Xuemin Wang;Yizhong Huang;Tao Liu;Guanghua Yu;Ke He;Jiao Teng(Department of Material Physics and Chermistry,University of Science and Technology Beijing,Bejing 100083;State Key Laboratory of Low-Dimensional Quantum Physics,Tsinghua University,Beijing 100084;Corrosion and Protction Center,Key Laboratory for Environmental Fracture(MOE),Institute of Advanced Materials and Technology,Universityr of Science and Technology Beijing,Beijing 100083;Collaborative Innovation Center of Advanced Steel Technology,University of Science and Technology Beijing,Beijing 100083;CAS Key Laboratory of Standardization and Measurement for Nanotechnology,National Center for Nanoscience and Technology,Beijing 100190;Institute of Microstructure and Property of Adranced Materials,Beijing Key Lab of Microstrueture and Property of Advanced Materials,Beijing University of Technology,Beijing 1001247;School of Microelectronics,University of Science and Technology of China,Hefei 230026;School of Materials Science and Engineering,Nanyang Technological University,50 Nanyang Avenue,639798,Singapore;Department of Physics,The Ohio State University,Columbus,Ohio 43210,USA)
基金
National Key R&D Plan Program of China(Grant No.2017YFF0206104)
National Key Scien-tific Research Projects of China(Grant No.2015CB921502)
National Natural Science Foundation of China(Grant Nos.61574169 and 51871018)
Beijing Laboratory of Metallic Materials and Processing for Modern Transportation,the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences
Beijing Natural Science Foundation(Grant No.Z180014)
Beijing Outstanding Young Scientists Projects(Grant No.BJJWZYJH01201910005018)。
