一种改进的InP HBT小信号模型的直接提取法

An improved direct extraction method for InP HBT small-signal model

提出了一种改进的直接提取方法来提取InP HBT小信号等效电路中的模型参数,并将其成功地应用InP异质结双极晶体管(HBT)小信号等效电路。在所采用的模型中考虑了分布式基极-集电极电容效应。与其他直接参数提取方法相比,该方法从外围寄生元件到内部本征元件依次进行参数提取,提取过程较为清晰。除寄生参数外,其余所有的参数计算均未经过任何简化近似。该方法依赖于S参数的测量,所有等效电路参数直接从S参数数据中提取,而无需任何基于初始值的近似。在0.1~40 GHz的频率范围内,直接提取法在InP HBT上得到了成功的验证,并在整个频率范围内得到了较好的测量结果与计算结果的一致性。

In this paper,an improved direct extraction method to extract the model parameters in InP heterojunc⁃tion bipolar transistor(HBT)small-signal equivalent circuit is presented and successfully applied to small-signal equivalent circuit of InP HBT.The distributed base-collector capacitance effect is taken into consideration in the adopted model.The extracting process of this method,which extracts parameters in turn from the peripheral para⁃sitic elements to the intrinsic internal elements,is clearer than other direct extraction methods.Except for the para⁃sitic parameters,all other parameters are calculated without any simplified approximation.This method relies on S parameters measurement.All of the equivalent circuit parameters are extracted directly from the S parameters without using approximations based on initial values.The direct extraction method is successfully validated on InP HBT in the frequency range of 0.1~40 GHz,and excellent agreement is achieved between the measured and calculated S parameters over the whole frequency range.