摘要
采用55 nm CMOS工艺,设计了一款应用于毫米波成像系统的94 GHz低噪声放大器(LNA)。提出一种双耦合等效跨导增强技术,在提高增益的同时,实现良好的宽带输入匹配。使用中和电容技术和共栅管栅端短接技术,进一步提高增益,并保证放大器的高频稳定性。芯片测试结果表明,LNA的小信号增益最大值达到14.2 dB,3 dB带宽为87.1~95 GHz,噪声系数为6.7dB,输入1 dB压缩点为-13dBm。
A 94 GHz mm-Wave LNA targeted for imaging system is designed and fabricated in 55 nm CMOS process.The dual-coupling gm-boosting technique is proposed to achieve high gain and wideband input matching.Meanwhile,in order to improve the gain and ensure the stability of the proposed LNA,the capacitance neutralization method and the common-gate-shorting technique are simultaneously introduced.The measurement results indicate that the LNA achieves a small signal gain of 14.2 dB,a BW-3dB of 87.1~95 GHz,a NF of 6.7dB as well as an input-referred 1 dB compression point of-13 dBm.
作者
张凯娟
石春琦
张润曦
ZHANG Kai-Juan;SHI Chun-Qi;ZHANG Run-Xi(Institute of Microelectronic Circuits and Systems,East China Normal University,Shanghai 200241,China;Key Laboratory of Multidimensional Information Processing,East China Normal University,Shanghai 200241,China)
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2020年第3期306-310,共5页
Journal of Infrared and Millimeter Waves
基金
华东师范大学“幸福之花”先导研究基金项目。
关键词
双耦合等效跨导增强
低噪声放大器
毫米波
共栅管栅端短接
Dual-coupling gm-boosting technique
Low noise amplifier(LNA)
mm-Wave
Commongate-shorting technique