背散射电子成像在纳米多层膜形貌观察中的应用

Application of back-scattered-electron imaging in nano-multilayer characterization

本文以背散射成像技术在扫描电镜观察纳米多层膜形貌中的应用为背景,简要介绍了扫描电子显微镜背散射电子成像的工作原理,并从分析准确度、分辨率及取出角对背散射电子成像影响的3个角度研究了其在纳米多层膜表面形貌观察中的应用.结果表明:利用扫描电镜背散射电子成像技术可有效表征纳米多层膜样品微区成分变化,能够快速了解样品的组成和结构特征,其分析准确度、分辨率均在纳米量级.该方法可为纳米多层膜调制结构的表征及鉴别提供快速、简便、有效的分析手段.同时,对该技术的探讨将帮助物理学专业学生更好的理解背散射现象的物理机制,帮助材料专业的学生更好的应用该表征技术.

In order to extend applied realms of back-scattered-electron(BSE)imaging technique in the nanometer multilayer morphology observation,the basic principles and applications of the BSE images in nano-multilayer characterization are described from three aspects:analytical accuracy,maximum resolution and detection angle.BSE imaging is used to study the composition changes in the micro areas of nano-multilayer so as to understand the composition and structure characteristics of samples in a short time and to provide a handy and effective analysis method for the multi-layer structures of nano-multilayer.Meanwhile,the discussion of this technology will help physics majors better understand the physical mechanism of backscattering phenomenon,and help materials majors better apply this characterization technology.