二维材料异质结增强的硅基太赫兹光调制器

Silicon-based Terahertz Optical Modulator with Enhanced 2D Material Heterostructure

研究了石墨烯/氮化硼二维异质结增强的硅基太赫兹波光调制器。利用太赫兹波时域谱系统和实验室自主搭建的太赫兹波动态测试系统分别测试了808 nm激光对太赫兹波的静态和动态调制。当照射在太赫兹波调制器上的激光功率从0增加至500 mW时,平均太赫兹波透过率从58%下降到13%,静态调制深度最高达到76%(500 mW)。动态测试获得的最大调制速度为15 kHz(100 mW)。实验结果表明,与单层石墨烯增强的硅基调制器相比,石墨烯/氮化硼异质结可以更大地提高硅对于太赫兹波的调制深度,并提升调制速度。

An optical terahertz modulator based on graphene/boron nitride 2D heterostructure coated silicon was studied in this paper.The static and dynamic modulation of THz wave were tested respectively with a 808 nm laser by using the terahertz time-domain spectrum system and a terahertz wave dynamic test system independently built by the laboratory.When the laser power is increased from 0 to 500 mW,the average transmittance through the terahertz modulator decreased from 58%to 13%with maximum modulation depth of 76%(500 mW).The maximum modulation speed obtained by the dynamic modulation test is 15 kHz(100 mW).The experimental results show that the modulation depth and speed can be obviously enhanced by graphene/boron nitride 2D hetrostructure in contrast to the single-layer graphene coated silicon.