后摩尔时代晶体管:新兴材料与尺寸极限

Field effect transistor in post-Moore era:emerging materials and size limit

在后摩尔时代,大规模半导体集成电路对功耗和集成密度的要求使得晶体管器件的开发需要在"材料、制程、结构"三个维度同步推进。文章详细梳理了近年来涌现的新兴低维半导体材料及异质结构,包括碳纳米管、过渡族金属硫属化合物、黑磷、碲烯和一维/二维范德华异质结等,并对其电学物理特性进行了深入的讨论,同时总结了这些材料在14nm工艺节点以下超短沟道晶体管和新结构晶体管器件方面的最新进展,最后从材料角度对半导体逻辑器件的进一步发展指出方向。

In the post-Moore era,advanced transistor technology in terms of“materials,process and configuration”needs surgently to meet the requirements of power consumption and integration density for large-scale integrated circuit(IC).We herein present a succinct and critical survey of the emerging low-dimensional semiconducting materials for field-effect transistors(FETs),including carbon nanotubes(CNTs),transition metal dichalcogenides(TMDCs),black phosphorus(B-P),tellurene,and related one/twodimensional van der Waals heterostructures.Recent research advances of novel FETs below 14 nm node on basis of these materials are also reviewed.In the end,the prospects for future research opportunities as well as accompanying challenges of low-dimensional semiconducting materials are summarized and highlighted.