FTW150K高比容钽粉研制钽电容器电介质膜形成工艺的研究

Study on the Formation Process of Tantalum Capacitor Dielectric Film by FTW150K High Specific Volume Tantalum Powder

研究FTW150K高比容钽粉研制钽电解电容器电介质膜的形成工艺.用例试方法分析,讨论在容量、损耗参数引出难和形成工艺不稳定条件下,钽电解电容器的形成电压、形成电流及形成温度等对电介质膜的影响.结果表明,形成致密的电介质氧化膜是容量引出的关键,当形成电压为额定电压的4~5倍、形成电流为1.76μA时为该实验的最佳工艺条件.

The article studies the formation process of dielectric film of tantalum electrolytic capacitor developed by FTW150K high specific volume tantalum powder.It uses the method of sample test to analyze the influence of different process parameters such as formation voltage,formation current and formation temperature of tantalum electrolytic capacitor on the dielectric film under the conditions of difficulty in drawing capacity and loss of formation and process instability.The results show that the formation of a dense dielectric oxide film is the main part of the capacity extraction,and the optimum process conditions are when the formation voltage is 4 to 5 times the rated voltage and the formation current is 1.76μA.