摘要
The grain boundaries of graphene are disordered topological defects,which would strongly affect the physical and chemical properties of graphene.In this paper,the spectral characteristics and photoresponse of MoS2/graphene heterostructures are studied.It is found that the blueshift of the G and 2D peaks of graphene in Raman spectrum is due to doping.The lattice mismatch at the graphene boundaries results in a blueshift of MoS2 features in the photoluminescence spectra,comparing to the MoS2 grown on SiO2.In addition,the photocurrent signal in MoS2/hexagonal single-crystal graphene heterostructures is successfully captured without bias,but not in MoS2/polycrystalline graphene heterostructures.The electron scattering at graphene grain boundaries affects the optical response of MoS2/graphene heterostructures.The photoresponse of the device is attributed to the optical absorption and response of MoS2 and the high carrier mobility of graphene.These findings offer a new approach to develop optoelectronic devices based on two-dimensional material heterostructures.
作者
张悦
张祥喆
邓楚芸
葛奇
黄俊杰
卢捷
林高翔
翁泽锴
张学骜
蔡伟伟
Yue Zhang;Xiangzhe Zhang;Chuyun Deng;Qi Ge;Junjie Huang;Jie Lu;Gaoxiang Lin;Zekai Weng;Xueao Zhang;Weiwei Cai(College of Physical Science and Technology,Xiamen University,Xiamen 361005,China;College of Arts and Science,National University of Defense Technology,Changsha 410073,China;Chongqing 2D Materials Institute,Chongqing 400714,China)
基金
National Natural Science Foundation of China(Grant No.11874423).